Silane

Specification    
Purity,% 99.9999
Oxygen + Argon ≤0.06 ppmv
Nitrogen ≤0.5 ppmv
Carbon dioxide ≤0.05 ppmv
Hydrogen ≤20.0 ppmv
Carbon monoxide ≤0.08 ppmv
Moisture ≤0.5 ppmv
Methane ≤0.04 ppmv
Helium ≤1.0ppmv
Hydrocarbon (Sum of C2-C4) ≤0.1 ppmv
Total chlorosilane ≤0.1 ppmv
Disilane ≤0.5 ppmv
Disiloxane ≤0.05 ppmv
Resistivity, N type (ohm-cm) >2500

transportation    
DOT shipping name Silane
DOT classification 2.1
DOT label combustible gas
UN NO. UN 2203
CAS No. 7803-62-5
CGA/DISS/JIS/BS341/DIN477 350/632/W22-14L/NO.3/NO.1
Transport state Compressible gas

Technical Information    
Cylinder condition @ 21.1°C gas
Combustion limit in air 1.37-97%
Natural temperature (°C) -50
Molecular weight (g/mol) 32.117
Specific gravity (air =1) 1.11
Critical temperature (°C) 3.45
Critical temperature (psig) 687.8

Application
Mainly used in the chemical vapor deposition (CVD) thin film process of semiconductors, FTF-LCD, solar cells and energy-saving glass. The use on semiconductors is mainly for film formation of Si, while on TFT-LCD, it is used for the formation of amorphous silicon on glass substrates. It is also used for solar cells to form anti-reflective films to improve power generation efficiency.