Phosphine

Specification    

Purity,% 99.6 99.9997 99.9999
Oxygen ≤ 1 ppmw ≤0.1 ppmv ≤0.1 ppmv
Hydrogen ≤ 0.4%

Nitrogen
≤1.0 ppmv ≤0.1 ppmv
Carbon dioxide
≤0.1 ppmv ≤0.1 ppmv
Carbon monoxide
≤0.1 ppmv ≤0.05 ppmv
Methane
≤0.1 ppmv ≤0.1 ppmv
Moisture
≤1.0 ppmv ≤0.1 ppmv
Argon    

≤0.1 ppmv
Arsine

≤0.05 ppmv
Germane

≤0.05 ppmv
Hydrogen sulfide

≤0.05 ppmv
Silane

≤0.05 ppmv

transportation    

DOT shipping name Phosphine

DOT classification 2.3

DOT label Toxic, flammable gas

UN NO. UN 2199

CAS No. 7803-51-2

CGA/DISS/JIS/BS341

/DIN477

350/632/W22-14L/NO.4/NO.1

Transportation status Liquefied gas

Technical Information    

Cylinder condition @ 21.1°C liquid

Combustion limit in air 1.6-98%

Natural temperature (°C) 40

Molecular weight (g/mol) 33.998

Specific gravity (air =1) 1.17

Critical temperature (°C) 51.6

Critical temperature (psig) 933.2

Application

1. As an n-type dopant in semiconductor manufacturing
2. In semiconductor manufacturing, the process of epitaxial silicon
3. In semiconductor manufacturing, the doping of selected regions on the crystal source.
4. In semiconductor manufacturing, used for doping polysilicon interconnects or certain capacitors
5. In semiconductor manufacturing, used to form borophosphosilicate glass
6. In semiconductor manufacturing, ion implantation.